BLS6G2933S-130,112 NXP Semiconductors RF MOSFET Transistors TRANS S-BAND RADAR LDMOS

Part Nnumber
BLS6G2933S-130,112
Description
RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
Producer
NXP Semiconductors
Basic price
256,60 EUR

The product with part number BLS6G2933S-130,112 (RF MOSFET Transistors TRANS S-BAND RADAR LDMOS) is from company NXP Semiconductors and distributed with basic unit price 256,60 EUR. Minimal order quantity is 60 pc.


NXP Product Category: RF MOSFET Transistors RoHS:  Details Id - Continuous Drain Current: 33 A Vds - Drain-Source Breakdown Voltage: 60 V Rds On - Drain-Source Resistance: 135 mOhms Transistor Polarity: N-Channel Frequency: 2.9 GHz to 3.3 GHz Vgs - Gate-Source Breakdown Voltage: 13 V Gain: 12.5 dB Output Power: 130 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package/Case: SOT-922-1 Packaging: Tube Brand: NXP Semiconductors Factory Pack Quantity: 60 Vgs th - Gate-Source Threshold Voltage: 1.8 V


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