PHE13009,127 NXP Semiconductors Bipolar Transistors - BJT RAIL PWR-MOS

Part Nnumber
PHE13009,127
Description
Bipolar Transistors - BJT RAIL PWR-MOS
Producer
NXP Semiconductors
Basic price
0,30 EUR

The product with part number PHE13009,127 (Bipolar Transistors - BJT RAIL PWR-MOS) is from company NXP Semiconductors and distributed with basic unit price 0,30 EUR. Minimal order quantity is 5000 pc.


NXP Product Category: Bipolar Transistors - BJT RoHS:  Details Brand: NXP Semiconductors Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 700 V Collector- Emitter Voltage VCEO Max: 400 V Maximum DC Collector Current: 12 A Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-220-3 DC Collector/Base Gain hFE Min: 8 DC Current Gain hFE Max: 8 Maximum Power Dissipation: 80 W Minimum Operating Temperature: - 65 C Packaging: Tube Factory Pack Quantity: 1000 Part # Aliases: PHE13009


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